PBSS4112PAN
PBSS4112PAN is manufactured by NXP Semiconductors.
29 November 2012
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
Product data sheet
1. Product profile
1.1 General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP plement: PBSS4112PANP. PNP/PNP plement: PBSS5112PAP.
1.2 Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- High energy efficiency due to less heat generation
- AEC-Q101 qualified 1.3 Applications
- Load switch
-...
