| Part Number | PBSS4112PAN Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview |
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP.
and benefits * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain hFE at high IC * Reduced Printed-Circuit Board (PCB) requirements * High energy efficiency due to less heat generation * AEC-Q101 qualified 1.3 Application. |