• Part: PBSS4260PANPS
  • Manufacturer: Nexperia
  • Size: 781.29 KB
Download PBSS4260PANPS Datasheet PDF
PBSS4260PANPS page 2
Page 2
PBSS4260PANPS page 3
Page 3

PBSS4260PANPS Key Features

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • Exposed heat sink for excellent thermal and electrical conductivity
  • High energy efficiency due to less heat generation
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • AEC-Q101 qualified

PBSS4260PANPS Description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PBSS4260PANS PNP/PNP plement:.