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PBSS4260PANPS - NPN/PNP Transistor

Description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

2.

Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • Reduced Printed-Circuit Board (PCB) requirements.
  • Exposed heat sink for excellent thermal and electrical conductivity.
  • High energy efficiency due to less heat generation.
  • Suitable for Automatic Optical Inspection (AOI) of solder joints.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PBSS4260PANPS
Manufacturer nexperia
File Size 781.29 KB
Description NPN/PNP Transistor
Datasheet download datasheet PBSS4260PANPS Datasheet
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PBSS4260PANPS 60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor 4 February 2016 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4260PANS PNP/PNP complement: PBSS5260PAPS 2.
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