Datasheet Summary
12 December 2012
60 V, 2 A NPN/PNP low VCEsat (BISS) transistor
Product data sheet
1. General description
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN plement: PBSS4260PAN. PNP/PNP plement: PBSS5260PAP.
2. Features and benefits
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Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified
3. Applications
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- Load switch Battery-driven...
