Datasheet Summary
DF N1 01
28 August 2013
0D -3
60 V, 2 A NPN low VCEsat (BISS) transistor
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP plement: PBSS5260QA.
2. Features and benefits
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- Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified
3. Applications
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