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PBSS4260QA Datasheet NPN Low Vcesat (biss) Transistor

Manufacturer: NXP Semiconductors

Overview: DF N1 01 PBSS4260QA 28 August 2013 0D -3 60 V, 2 A NPN low VCEsat (BISS) transistor Product data sheet 1.

General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

PNP plement: PBSS5260QA.

2.

Key Features

  • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified 3.

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