Datasheet4U Logo Datasheet4U.com

PBSS4260PANS - NPN/NPN Transistor

Description

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

2.

Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • Reduced Printed-Circuit Board (PCB) requirements.
  • Exposed heat sink for excellent thermal and electrical conductivity.
  • High energy efficiency due to less heat generation.
  • Suitable for Automatic Optical Inspection (AOI) of solder joints.
  • AEC-Q101 qualified 3.

📥 Download Datasheet

Datasheet preview – PBSS4260PANS

Datasheet Details

Part number PBSS4260PANS
Manufacturer nexperia
File Size 727.75 KB
Description NPN/NPN Transistor
Datasheet download datasheet PBSS4260PANS Datasheet
Additional preview pages of the PBSS4260PANS datasheet.

📁 Similar Datasheet

Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PBSS4260PANS 60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor 15 December 2015 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP/PNP complement: PBSS5260PAPS 2.
Published: |