* I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I Compl
PBSS4350SPN Datasheet (695.72 KB)
PBSS4350SPN
695.72 KB
Npn/pnp transistor.
PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 5 April 2007 Product data sheet 1. Product profile 1.1 General desc.
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