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PBSS5240X - PNP transistor

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4240X.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High efficiency due to less heat generation 1.3.

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Full PDF Text Transcription (Reference)

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PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240X. 1.2 Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency due to less heat generation 1.3 Applications • DC-to-DC conversion • Supply line switching • Battery charger • LCD backlighting • Driver in low supply voltage applications (e.g. lamps and LEDs) • Inductive load driver (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1.