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PBSS5240Z - 2A PNP low VCEsat (BISS) transistor

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High energy efficiency due to less heat generation.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PBSS5240Z
Manufacturer Nexperia
File Size 704.02 KB
Description 2A PNP low VCEsat (BISS) transistor
Datasheet download datasheet PBSS5240Z Datasheet

Full PDF Text Transcription for PBSS5240Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PBSS5240Z. For precise diagrams, and layout, please refer to the original PDF.

PBSS5240Z 40 V, 2 A PNP low VCEsat (BISS) transistor 15 October 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transist...

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escription PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High energy efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • DC-to-DC conversion • Supply line switching • Battery charger • LCD backlighting • Driver in low supply voltage applications (e.g. lamps and LEDs) • Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1.