PBSS5255PAPS
55V, 2A PNP/PNP low VCEsat (BISS) double transistor
11 December 2015
Product data sheet
1. General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless
medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic
package with visible and solderable side pads.
2. Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• Exposed heat sink for excellent thermal and electrical conductivity
• High energy efficiency due to less heat generation
• Suitable for Automatic Optical Inspection (AOI) of solder joints
• AEC-Q101 qualified
3. Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• LED lighting
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
Per transistor
VCEsat
collector-emitter
saturation voltage
Conditions
open base
single pulse; tp ≤ 1 ms
IC = -0.7 A; IB = -7 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -55 V
- - -2 A
- - -3 A
- -300 -420 mV
