Datasheet Details
| Part number | PBSS5260PAP |
|---|---|
| Manufacturer | Nexperia |
| File Size | 739.35 KB |
| Description | 2A PNP/PNP low VCEsat (BISS) transistor |
| Datasheet |
 PBSS5260PAP Datasheet
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General Description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4260PANP.
NPN/NPN complement: PBSS4260PAN.
Key Features
- Very low collector-emitter saturation voltage VCEsat.
- High collector current capability IC and ICM.
- High collector current gain hFE at high IC.
- Reduced Printed-Circuit Board (PCB) requirements.
- High efficiency due to less heat generation.
- AEC-Q101 qualified 3.
