PBSS5330PAS Datasheet - nexperia

PNP transistor

* Low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High collector current gain (hFE) at high IC

* High efficiency due to less heat generation

* High temperature applications up to 175 °C

* Reduced Printed

PBSS5330PAS

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Pnp transistor.

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PBSS5330PAS PNP transistor nexperia

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