PMCM650CUNE Description
N-channel enhancement mode mon-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
PMCM650CUNE Key Features
- mon-drain type for bi-directional current flow
- Low threshold voltage
- Ultra small package: 0.98 × 1.48 × 0.35 mm
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM