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PMCM950ENE - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Ultra small package: 1.48 × 1.48 × 0.35 mm.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

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Full PDF Text Transcription for PMCM950ENE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PMCM950ENE. For precise diagrams, and layout, please refer to the original PDF.

PMCM950ENE 60 V, N-channel Trench MOSFET 13 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer...

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nnel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Ultra small package: 1.48 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.

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