N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Key Features
Trench MOSFET technology.
Low threshold voltage.
Very fast switching.
Enhanced power dissipation capability of 1240 mW
3.
Full PDF Text Transcription for PMN30UN (Reference)
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PMN30UN. For precise diagrams, and layout, please refer to the original PDF.
PMN30UN 30 V, N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457...
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annel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability of 1240 mW 3. Applications • LED driver • Power management • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V;
PMN30UN Datasheet
