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PMN30XPE - P-channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • Enhanced power dissipation capability of 1390 mW 3.

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Full PDF Text Transcription

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PMN30XPE 20 V, P-channel Trench MOSFET 16 April 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Enhanced power dissipation capability of 1390 mW 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VDS drain-source voltage Tj = 25 °C - - -20 VGS gate-source voltage -12 - 12 ID drain current VGS = -4.
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