PMPB12R5UPE
PMPB12R5UPE is P-channel MOSFET manufactured by Nexperia.
description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
- Electro Static Discharge (ESD) protection > 2000 V HBM (class H2)
3. Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portable devices
- Hard disk and puting power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max
VDS drain-source voltage Tj = 25 °C
- -
-20
VGS gate-source voltage
-10
- 10
ID drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
- -
-13
Static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -9.4 A; Tj = 25 °C resistance
- 11.8 14.4
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Unit V V A mΩ
Nexperia
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin...
