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PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
Rev. 1 — 21 December 2010
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible Trench MOSFET technology
Very fast switching
1.3 Applications
High-side loadswitch High-speed line driver
Relay driver Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source
Tamb = 25 °C
voltage
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID drain current Static characteristics
RDSon
drain-source on-state resistance
VGS = -4.
PMV48XP Datasheet
