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PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
Rev. 1 — 21 December 2010 Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible Trench MOSFET technology Very fast switching
1.3 Applications
High-side loadswitch High-speed line driver Relay driver Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -2.4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.
PMV48XP Datasheet
