PMV48XPA
PMV48XPA is P-channel Trench MOSFET manufactured by NXP Semiconductors.
description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Logic-level patible
- Trench MOSFET technology
- Very fast switching
- AEC-Q101 qualified
3. Applications
- High-side loadswitch
- High-speed line driver
- Relay driver
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tamb = 25 °C
- - -20 V
VGS gate-source voltage
-12
- 12 V
ID drain current
VGS = -4.5 V; Tamb = 25 °C
[1]
- - -3.5 A
Static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C resistance
- 48 55 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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NXP Semiconductors
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 G gate 2 S source 3 D drain
Simplified...
