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PSMN0R9-25YLC - N-channel MOSFET

General Description

Logic level enhancement mode N-channel MOSFET in LFPAK package.

This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Key Features

  • High reliability Power SO8 package, qualified to 175°C.
  • Optimised for 4.5V Gate drive utilising NextPower Superjunction technology.
  • Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads.
  • Ultra low Rdson and low parasitic inductance 1.3.

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Full PDF Text Transcription for PSMN0R9-25YLC (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PSMN0R9-25YLC. For precise diagrams, and layout, please refer to the original PDF.

PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 4 July 2011 Product data sheet 1. Product profile 1.1 General descrip...

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4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package, qualified to 175°C  Optimised for 4.5V Gate drive utilising NextPower Superjunction technology  Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads  Ultra low Rdson and low parasitic inductance 1.3 Applications  DC-to-DC converters  Lithium-ion battery protection  Load switchin

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