PSMN1R6-30MLH mosfet equivalent, n-channel mosfet.
* Optimized for low RDSon
* Low leakage < 1 µA at 25 °C
* Low spiking and ringing for low EMI designs
* Optimized for 4.5 V gate drive
* 160 A rated <.
2. Features and benefits
* Optimized for low RDSon
* Low leakage < 1 µA at 25 °C
* Low spiking and ringing.
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