PSMN1R6-30PL Datasheet | NXP Semiconductors

.Data Sheet.co.kr N-channel 30 V 1.7 mΩ logic level MOSFET Rev. 02 - 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 1.3 Applications - DC-to-DC converters - Load switiching - Motor control - Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1; Tmb = 25 °C; see Figure 2 [1] Min Typ Max 30 100 306 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation gate-drain charge Symbol Parameter Dynamic characteristics QGD VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14 VGS = 10 V; ID = 25 A; Tj = 25 °C; [2] 27 n C QG(tot) total gate charge - 101 - n C Static characteristics RDSon drain-source on-state resistance 1.4 1.7 mΩ [1] [2] Continuous current is limited by package. Measured 3 mm from package. Datasheet pdf - http://..net/ .Data Sheet.co.kr NXP Semiconductors N-channel 30 V 1.7 mΩ logic level MOSFET 2. Pinning...