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PSMN1R6-30MLH - N-channel MOSFET

Datasheet Summary

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.

NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency.

Rated to 160 A and optimized for DC load switch and hot-swap applications.

Features

  • Optimized for low RDSon.
  • Low leakage < 1 µA at 25 °C.
  • Low spiking and ringing for low EMI designs.
  • Optimized for 4.5 V gate drive.
  • 160 A rated.
  • High reliability copper-clip bonded and solder die attach LFPAK33 package.
  • Qualified to 175 °C.
  • Exposed leads for optimal visual solder inspection 3.

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Datasheet Details

Part number PSMN1R6-30MLH
Manufacturer nexperia
File Size 299.02 KB
Description N-channel MOSFET
Datasheet download datasheet PSMN1R6-30MLH Datasheet
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PSMN1R6-30MLH N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology 12 November 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applications. 2. Features and benefits • Optimized for low RDSon • Low leakage < 1 µA at 25 °C • Low spiking and ringing for low EMI designs • Optimized for 4.5 V gate drive • 160 A rated • High reliability copper-clip bonded and solder die attach LFPAK33 package • Qualified to 175 °C • Exposed leads for optimal visual solder inspection 3.
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