PSMN1R6-30MLH Datasheet | Nexperia

N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using Next Power S3 technology 12 November 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. Next Power S3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applications. 2. Features and benefits - Optimized for low RDSon - Low leakage < 1 µA at 25 °C - Low spiking and ringing for low EMI designs - Optimized for 4.5 V gate drive - 160 A rated - High reliability copper-clip bonded and solder die attach LFPAK33 package - Qualified to 175 °C - Exposed leads for optimal visual solder inspection 3. Applications - DC switch / load switch - USB-PD and fast-charge - Battery protection - OR-ing and hot-swap - Synchronous rectifier in AC-DC and DC-DC applications - Brushed and BLDC (brushless) motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction...