PSMN1R6-30MLH Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applications.
PSMN1R6-30MLH Key Features
- Optimized for low RDSon
- Low leakage < 1 µA at 25 °C
- Low spiking and ringing for low EMI designs
- Optimized for 4.5 V gate drive
- 160 A rated
- High reliability copper-clip bonded and solder die attach LFPAK33 package
- Qualified to 175 °C
- Exposed leads for optimal visual solder inspection
PSMN1R6-30MLH Applications
- Optimized for low RDSon