Datasheet Details
| Part number | PSMN1R6-30MLH |
|---|---|
| Manufacturer | Nexperia |
| File Size | 299.02 KB |
| Description | N-channel MOSFET |
| Datasheet |
 PSMN1R6-30MLH Datasheet
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General Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.
NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency.
Rated to 160 A and optimized for DC load switch and hot-swap applications.
Key Features
- Optimized for low RDSon.
- Low leakage < 1 µA at 25 °C.
- Low spiking and ringing for low EMI designs.
- Optimized for 4.5 V gate drive.
- 160 A rated.
- High reliability copper-clip bonded and solder die attach LFPAK33 package.
- Qualified to 175 °C.
- Exposed leads for optimal visual solder inspection 3.