PSMN1R6-30BL Datasheet | NXP Semiconductors

D2 PA K N-channel 30 V 1.9 mΩ logic level MOSFET in D2PAK Rev. 1 - 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 1.3 Applications - DC-to-DC converters - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 13; see Figure 6 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 6 Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge non-repetitive drain-source avalanche energy VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 27 101 1.7 n C n C J Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 2.21 1.58 Max 30 100 306 175 2.6 1.9 Unit V A W °C mΩ mΩ Static characteristics Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped [1] Continuous current is limited by package. NXP Semiconductors N-channel 30 V 1.9 mΩ logic level MOSFET in D2PAK 2. Pinning...