PSMN2R6-80YSF Datasheet | Nexperia

description Next Power 80 V, standard level gate drive MOSFET. Qualified to 175 °C and remended for industrial and consumer applications. 2. Features and benefits - Low Qrr for higher efficiency and lower spiking - 218 A ID(max) - demonstrated continuous current rating - Low QG × RDSon FOM for high efficiency switching applications - Strong avalanche energy rating (Eas) - Avalanche rated and 100% tested - Ha-free and Ro HS pliant LFPAK56E package 3. Applications - Synchronous rectifier in AC-DC and DC-DC - Primary side switch in DC-DC - BLDC motor control - USB-PD adapters - Full-bridge and half-bridge applications - Flyback and resonant topologies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C Tmb = 25 °C; Fig. 1 RDSon drain-source on-state resistance Dynamic characteristics VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 10 V; ID = 25 A; Tj = 100 °C QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness ID = 25 A; VDS = 40 V; VGS = 10 V EDS(AL)S non-repetitive drainsource avalanche energy ID = 58 A; Vsup ≤ 80 V; RGS = 50 Ω; [1] VGS = 10 V; Tj(init) = 25 °C; unclamped; tp = 127 µs; Fig. 2 Min Typ Max...