PSMN2R6-100SSF Datasheet | Nexperia

description Next Power 100 V, standard level gate drive MOSFET. Qualified to 175 °C and remended for industrial and consumer applications. 2. Features and benefits - Low Qrr for higher efficiency and lower spiking - 200 Amps ID(max) continuous current rating - Low QG × RDSon FOM for high efficiency switching applications - Strong avalanche energy rating (Eas) - Avalanche rated and 100% tested - Ha-free and Ro HS pliant LFPAK88 package 3. Applications - Synchronous rectifier in AC-DC and DC-DC - Primary side switch in DC-DC - BLDC motor control - Full-bridge and half-bridge applications - Battery protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Tj junction temperature Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge ID = 25 A; VDS = 50 V; VGS = 10 V; Fig. 14; Fig. 15 Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy ID = 71 A; Vsup ≤ 100 V; RGS = 50 Ω; [1] VGS = 10 V; Tj(init) = 25 °C; unclamped; tp = 125 µs; Fig. 4 Min Typ Max Unit - - 100 V - - 200...