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PSMN2R6-100SSF - N-channel MOSFET

General Description

NextPower 100 V, standard level gate drive MOSFET.

Qualified to 175 °C and recommended for industrial and consumer applications.

2.

Key Features

  • Low Qrr for higher efficiency and lower spiking.
  • 200 Amps ID(max) continuous current rating.
  • Low QG × RDSon FOM for high efficiency switching.

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Full PDF Text Transcription for PSMN2R6-100SSF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PSMN2R6-100SSF. For precise diagrams, and layout, please refer to the original PDF.

PSMN2R6-100SSF NextPower 100 V, 2.6 mΩ, 200 Amp, N-channel MOSFET in LFPAK88 package 17 August 2022 Preliminary data sheet 1. General description NextPower 100 V, standar...

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Preliminary data sheet 1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 200 Amps ID(max) continuous current rating • Low QG × RDSon FOM for high efficiency switching applications • Strong avalanche energy rating (Eas) • Avalanche rated and 100% tested • Ha-free and RoHS compliant LFPAK88 package 3. Applications • Synchronous rectifier in AC-DC and DC-DC • Primary side switch in DC-DC • BLDC motor control • Full-bridge and half-bridge applications