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PSMN2R6-80YSF - N-channel MOSFET

General Description

NextPower 80 V, standard level gate drive MOSFET.

Qualified to 175 °C and recommended for industrial and consumer applications.

2.

Key Features

  • Low Qrr for higher efficiency and lower spiking.
  • 218 A ID(max).
  • demonstrated continuous current rating.
  • Low QG × RDSon FOM for high efficiency switching.

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Full PDF Text Transcription for PSMN2R6-80YSF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PSMN2R6-80YSF. For precise diagrams, and layout, please refer to the original PDF.

PSMN2R6-80YSF NextPower 80 V, 2.7 mOhm, 218 A, N-channel MOSFET in LFPAK56E package 27 April 2023 Objective data sheet 1. General description NextPower 80 V, standard lev...

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jective data sheet 1. General description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 218 A ID(max) – demonstrated continuous current rating • Low QG × RDSon FOM for high efficiency switching applications • Strong avalanche energy rating (Eas) • Avalanche rated and 100% tested • Ha-free and RoHS compliant LFPAK56E package 3.

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