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QPM2239 - 13 - 15.5GHz 80W GaN Power Amplifier Module

General Description

13-15.5GHz 80W GaN Power Amplifier Module Samples (2 pcs.

Data Sheet Rev.

15.5 GHz 80W GaN Power Amplifier Module Absolute Maximum Ratings Parameter Value / Range Drain Voltage (VD) +29.5 V Gate Vol

Key Features

  • Frequency Range: 13.
  • 15.5 GHz.
  • PSAT (PIN = 25 dBm): 49 dBm.
  • PAE (PIN = 25 dBm): > 25 %.
  • IM3 ( POUT/Tone = 38 dBm): -22 dBc.
  • Small Signal Gain: 29 dB.
  • Bias: CW, VD = +28 V, IDQ = 800 mA, VG = -2.5 V typ.
  • Package Dimensions: 19.05 x 19.05 x 4.5 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram.

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Datasheet Details

Part number QPM2239
Manufacturer Qorvo
File Size 1.07 MB
Description 13 - 15.5GHz 80W GaN Power Amplifier Module
Datasheet download datasheet QPM2239 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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QPM2239 13 – 15.5 GHz 80W GaN Power Amplifier Module Product Overview Qorvo’s QPM2239 is a packaged, high-power Ku-band amplifier module, fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 13 – 15.5 GHz, the QPM2239 provides 80 W of saturated output power and 29 dB of small-signal gain while achieving > 25% poweradded efficiency. The QPM2239 is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package with a Cu base for superior thermal management. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under CW operation. The QPM2239 has DC blocking capacitors on both RF ports, which are matched to 50 ohms.