PE2012 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID =12A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 15mΩ @ VGS=2.5V
* High power and current handing capability
* Lead free product is acquired
* Surf.
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General Features
* VDS = 20V,ID =12A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 15mΩ @ VGS=2.5V
* High power and curr.
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