PE20N6 Datasheet | semi one

N-Channel Enhancement Mode Power MOSFET Description The PE20N6 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Schematic diagram Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Marking and pin assignment TO-252-2L...