PE20N6 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stabi.
General Features
* VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V
* High density cell design for ultra low Rdson
The PE20N6 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V
* High density cell design.
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