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PE2017 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: semi one

Overview: PE2017 N-Channel Enhancement Mode Power MOSFET.

Datasheet Details

Part number PE2017
Manufacturer semi one
File Size 211.22 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet PE2017-semione.pdf

General Description

The PE2017 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.It is ESD protested.

General

Key Features

  • VDS = 20V,ID =7A RDS(ON) < 24mΩ @ VGS=2.5V RDS(ON) < 17mΩ @ VGS=4.5V ESD Rating: 2500V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram Marking and pin Assignment.

PE2017 Distributor

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