PE20N6 - N-Channel Enhancement Mode Power MOSFET

semi one

General Description

The PE20N6 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =60V,ID =20A RDS(ON).

📥 Download Datasheet

PE20N6 n-channel enhancement mode power mosfet by semi one - Datasheet Preview

Datasheet Details

Part number	PE20N6
Manufacturer	semi one
File Size	355.81 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE20N6 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
PE200GB	THYRISTOR MODULE	SanRex Corporation
PE2010	CURRENT SENSOR	YAGEO
PE2012	N-Channel Enhancement Mode Power MOSFET	ChipSourceTek
PE2012T	N-Channel Enhancement Mode Power MOSFET	ChipSourceTek
PE2023	P-Channel Enhancement Mode Power MOSFET	ChipSourceTek

Other Datasheets by semi one

Part Number	Description
PE2012	N-Channel Enhancement Mode Power MOSFET
PE2017	N-Channel Enhancement Mode Power MOSFET
PE2023	P-Channel Enhancement Mode Power MOSFET
PE2300	N-Channel Enhancement Mode Power MOSFET
PE2301	P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PE20N6 N-Channel Enhancement Mode Power MOSFET Description The PE20N6 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.