900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






semi one

PE3400 Datasheet Preview

PE3400 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

PE3400
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE3400 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
D
G
GENERAL FEATURES
VDS = 30V,ID = 5.8A
RDS(ON) < 59m@ VGS=2.5V
RDS(ON) < 45m@ VGS=4.5V
RDS(ON) < 41m@ VGS=10V
S
Schematic diagram
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Marking and pin Assignment
Application
PWM applications
Load switch
Power management
SOT-23-3L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
PE3400
SOT-23-3L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Limit
30
±12
5.8
30
1.4
-55 To 150
Unit
V
V
A
A
W
1.0 /W
Min Typ Max Unit
30 33
-
V
WWW.SEMI-ONE.COM
Page 1




semi one

PE3400 Datasheet Preview

PE3400 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
VDS=30V,VGS=0V
VGS=±12V,VDS=0V
VDS=VGS,ID=250μA
VGS=2.5V, ID=4A
VGS=4.5V, ID=2.9A
VGS=10V, ID=2.9A
VDS=5V,ID=2.9A
VDS=15V,VGS=0V,
F=1.0MHz
VDD=15V,ID=2.9A
VGS=10V,RGEN=3
VDS=15V,ID=5.8A,
VGS=4.5V
VGS=0V,IS=2.9A
PE3400
- - 1 μA
- - ±100 nA
0.7 0.9
- 45
- 31
- 28
10 -
1.4
59
45
41
-
V
m
m
m
S
- 623
- 99
- 77
-
-
-
PF
PF
PF
- 3.3
- 4.8
- 26
-4
- 9.5
- 1.5
-3
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- 0.75 1.2
- - 2.9
V
A
WWW.SEMI-ONE.COM
Page 2


Part Number PE3400
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
Total Page 4 Pages
PDF Download

PE3400 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 PE3400 N-Channel Enhancement Mode Power MOSFET
semi one
2 PE3400A N-Channel Enhancement Mode Power MOSFET
semi one
3 PE3401 P-Channel Enhancement Mode Power MOSFET
semi one
4 PE3401A P-Channel Enhancement Mode Power MOSFET
semi one
5 PE3401F P-Channel Enhancement Mode Power MOSFET
semi one
6 PE3404A N-Channel Enhancement Mode Power MOSFET
semi one
7 PE3406A N-Channel Enhancement Mode Power MOSFET
semi one
8 PE3407 P-Channel Enhancement Mode Power MOSFET
semi one
9 PE3407A P-Channel Enhancement Mode Power MOSFET
semi one





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy