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PE3406A - N-Channel Enhancement Mode Power MOSFET

General Description

The PE3406A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications.

Key Features

  • VDS = 30V,ID = 5.8A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.5V.
  • ESD=2500V.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number PE3406A
Manufacturer semi one
File Size 685.98 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE3406A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE3406A N-Channel Enhancement Mode Power MOSFET Description The PE3406A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Genera Features ● VDS = 30V,ID = 5.8A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.