Datasheet4U Logo Datasheet4U.com

PE3406A - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PE3406A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications.

Features

  • VDS = 30V,ID = 5.8A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.5V.
  • ESD=2500V.
  • Lead free product is acquired.
  • Surface mount package.

📥 Download Datasheet

Datasheet preview – PE3406A

Datasheet Details

Part number PE3406A
Manufacturer semi one
File Size 685.98 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE3406A Datasheet
Additional preview pages of the PE3406A datasheet.

📁 Similar Datasheet

  • PE3401 - P-Channel Power MOSFET (ChipSourceTek)
  • PE3401A - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PE3407A - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PE3 - GaAs Foundry Services PROCESS PE3 (Tyco Electronics)
  • PE300B-10UV - CERMAX FOCUSED XENON ARC LAMPS (PerkinElmer Optoelectronics)
  • PE300BF - CERMAX XENON ARC LAMPS (PerkinElmer Optoelectronics)
  • PE300BUV - CERMAX XENON ARC LAMPS (PerkinElmer Optoelectronics)
  • PE300C-10F - CERMAX FOCUSED XENON ARC LAMPS (PerkinElmer Optoelectronics)
  • PE3010 - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PE30100K - N-Channel Power MOSFET (ChipSourceTek)
Other Datasheets by semi one
  • PE3400 - N-Channel Enhancement Mode Power MOSFET
  • PE3400A - N-Channel Enhancement Mode Power MOSFET
  • PE3401 - P-Channel Enhancement Mode Power MOSFET
  • PE3401A - P-Channel Enhancement Mode Power MOSFET
  • PE3401F - P-Channel Enhancement Mode Power MOSFET
  • PE3404A - N-Channel Enhancement Mode Power MOSFET
  • PE3407 - P-Channel Enhancement Mode Power MOSFET
  • PE3407A - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
PE3406A N-Channel Enhancement Mode Power MOSFET Description The PE3406A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Genera Features ● VDS = 30V,ID = 5.8A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.
Published: |