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PE3406A Datasheet Preview

PE3406A Datasheet

N-Channel Enhancement Mode Power MOSFET

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PE3406A
N-Channel Enhancement Mode Power MOSFET
Description
The PE3406A uses advanced trench technology to provide
excellent RDS(ON) and low gate charge.This device is suitable
for use as a load switch and PWM applications.
Genera Features
VDS = 30V,ID = 5.8A
RDS(ON) < 30m@ VGS=10V
RDS(ON) < 48m@ VGS=4.5V
ESD=2500V
Lead free product is acquired
Surface mount package
Application
Load switch
PWM application
Schematic diagram
Marking and pin assignment
SOT-23 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
30
±20
5.8
20
1.4
-55 To 150
89
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=30V,VGS=0V
Min Typ Max Unit
30 33
--
-
1
V
μA
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semi one

PE3406A Datasheet Preview

PE3406A Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Parameter
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Condition
VGS=±16V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=6A
VGS=4.5V, ID=5A
VDS=5V,ID=5A
VDS=15V,VGS=0V,
F=1.0MHz
VDD=15V, RL=3
VGS=10V,RGEN=3
VDS=15V,ID=5A,
VGS=10V
VGS=0V,IS=5A
PE3406A
Min Typ Max
- - ±10
Unit
uA
1.0 1.5
- 25
- 39
- 15
2.5
30
48
-
V
m
m
S
- 355
- 60
- 35
-
-
-
PF
PF
PF
- 4.5
- 2.5
- 14.5
- 3.5
- 5.2
- 0.85
- 1.3
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
5
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
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Part Number PE3406A
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
Total Page 6 Pages
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