PE3409 - P-Channel Enhancement Mode Power MOSFET
PE3409 Features
* VDS =-30V,ID =-5.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current Application
* Load switch
* battery protection Schematic diagram Marking and pin assignment SOT23-3 top
