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PE3415A Datasheet Preview

PE3415A Datasheet

P-Channel Enhancement Mode Power MOSFET

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PE3415A
P-Channel Enhancement Mode Power MOSFET
Description
The PE3415A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as1.8V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
VDS = -20V,ID =-4.5A
RDS(ON) < 60m@ VGS=-2.5V
RDS(ON) < 47m@ VGS=-4.5V
ESD Rating: 2500V HBM
High Power and current handing capability
Lead free product is acquired
Surface mount package
Schematic diagram
Marking and pin Assignment
Application
PWM application
Load switch
SOT-23 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Limit
-20
±10
-4.5
-30
1.4
-55 To 150
Unit
V
V
A
A
W
89.3 /W
Min Typ Max Unit
-20 - V
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semi one

PE3415A Datasheet Preview

PE3415A Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
VDS=-20V,VGS=0V
VGS=±10V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-4A
VDS=-5V,ID=-4A
PE3415A
- - 1 μA
- - ±10 μA
-0.4 -0.65
- 34.
- 44
8-
-1.0
47
60
-
V
m
m
S
VDS=-10V,VGS=0V,
F=1.0MHz
- 950
- 165
- 120
-
-
-
PF
PF
PF
VDD=-10V,RL=2. 5
VGS=-4.5V,RGEN=3
VDS=-10V,ID=-4A,
VGS=-4.5V
- 12
- 10
- 19
- 25
- 12
- 1.4
- 3.6
-
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=-1A
- - -1.2 V
- - -2.2 A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
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Page 2


Part Number PE3415A
Description P-Channel Enhancement Mode Power MOSFET
Maker semi one
Total Page 6 Pages
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