PE4953 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -5.3A RDS(ON) < 100mΩ @ VGS=-4.5V RDS(ON) < 49mΩ @ VGS=-10V
D1 G1
G2
D2
S1 S2
Schematic diagram
* High Power and current handing capability.
GENERAL FEATURES
* VDS = -30V,ID = -5.3A RDS(ON) < 100mΩ @ VGS=-4.5V RDS(ON) < 49mΩ @ VGS=-10V
D1 G1
G2
D2
S1 S.
The PE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* VDS = -30V,ID = .
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