A6SHB - N-Channel Enhancement Mode Power MOSFET

wpmtek

General Description

The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a battery protection or in other switching application.

Key Features

V DS = 30V, lD = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) < 58mΩ @ VGS=10V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.

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A6SHB n-channel enhancement mode power mosfet by wpmtek - Datasheet Preview

Datasheet Details

Part number	A6SHB
Manufacturer	wpmtek
File Size	797.32 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	A6SHB Datasheet

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Full PDF Text Transcription (Reference)

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WTM2306 N-Channel Enhancement Mode Power MOSFET Description ■ The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a battery protection or in other switching application. Features ■ V DS = 30V, lD = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) < 58mΩ @ VGS=10V ■ High power and current handing capability ■ Lead free product is acquired ■ Surface mount package Application ■ Battery protection.