A6SHB mosfet equivalent, n-channel enhancement mode power mosfet.
* V DS = 30V, lD = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) < 58mΩ @ VGS=10V
* High power and current handing capability
* Lead free product is acquired
* S.
* The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a battery protection or in other switching application.
Features
* V DS = 30V, lD = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) < 58mΩ @.
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