SSC8015GS6 Datasheet, Mosfet, AFSEMI

PDF File Details

Part number:

SSC8015GS6

Manufacturer:

AFSEMI

File Size:

113.06kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode mosfet. The SSC8015GS6 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device

TAGS

SSC8015GS6

AFSEMI

📁 Related Datasheet

SSC8013GS6 - P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8013GS6 P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 38mR@-4V5 ID  Applications  Load Switch  Portable Devices  DCDC co.

SSC8013GSB - P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8013GSB P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 38mR@-4V5 ID  Applications  Load Switch  Portable Devices  DCDC co.

SSC8019GN2 - P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8019GN2 P-Channel Enhancement Mode MOSFET  Features VDS -18V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5 ID -6.5A  Applicat.

SSC8020GS6 - N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8020GS6 N-Channel Enhancement Mode MOSFET  Features  VDS 20V VGS ±8V RDSon TYP 140mR@4V5 180mR@2V5 270mR@1V8 ID 750mA   General Descri.

SSC8020GS8 - N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8020GS8 N-Channel Enhancement Mode MOSFET  Features  VDS 20V VGS ±8V RDSon TYP 140mR@4V5 180mR@2V5 270mR@1V8 ID 0.6A   General Descrip.

SSC8020GS9 - N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8020GS9 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID 240mR@4V5 280mR@2V5 20V ±8V 0.4A 410mR@1V8  450mR@1V5  G.

SSC8022GS6 - N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8022GS6 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 35mR@4V5 45mR@2V5 ID 3.5A  Applications  Load Switch  Por.

SSC8023GS6 - P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8023GS6 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 60mR@-4V5 75mR@-2V5 ID -3A  Applications  Load Switch  P.

SSC8025GS6 - P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8025GS6 P-Channel Enhancement Mode MOSFET with ESD Protection  Features VDS VGS -20V ±8V RDSon TYP 50m R@-4V5 60m R@-2V5 70m R@-1V8 96m R@-1V5.

SSC8027GS6 - P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8027GS6 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±8V RDSon TYP 100mR@-4V5 119mR@-2V5 ID -2A  Applications  Load Switch  .