SSC8019GN2 P-Channel Enhancement Mode MOSFET

Description

SSC8019GN2 P-Channel Enhancement Mode MOSFET * .
This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with l.

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Datasheet Specifications

Part number: SSC8019GN2
Manufacturer: AFSEMI
File Size: 605.24 KB
Datasheet: SSC8019GN2-AFSEMI.pdf
Description: P-Channel Enhancement Mode MOSFET

Features

* VDS -18V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5 ID -6.5A

Applications

* Load Switch
* Portable Devices
* DCDC conversion
* Charging
* Driver for Relay,Solenoid,Motor,LED etc.

SSC8019GN2 Distributors

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SSC8019GN2 P-Channel Enhancement Mode MOSFET AFSEMI

AFSEMI SSC8019GN2-like datasheet