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SSC8019GN2 Datasheet - AFSEMI

SSC8019GN2 P-Channel Enhancement Mode MOSFET

This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuit.

SSC8019GN2-AFSEMI.pdf

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Datasheet Details

Part number:

SSC8019GN2

Manufacturer:

AFSEMI

File Size:

605.24 KB

Description:

P-channel enhancement mode mosfet.

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SSC8019GN2 SSC8019GN2 P-Channel Enhancement Mode MOSFET AFSEMI

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