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SSC8013GS6 - P-Channel Enhancement Mode MOSFET

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Datasheet Details

Part number
SSC8013GS6
Manufacturer
AFSEMI
File Size
196.55 KB
Datasheet
SSC8013GS6-AFSEMI.pdf
Description
P-Channel Enhancement Mode MOSFET

SSC8013GS6 Product details

Description

Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.Excellent thermal and electrical capabilities. Package Information D: Drain; G: Gate; S: Source ③ ①② SOT23 Unit:mm

Features

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P-Channel Enhancement Mode MOSFET AFSEMI
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