Datasheet Details
- Part number
- SSC8013GS6
- Manufacturer
- AFSEMI
- File Size
- 196.55 KB
- Datasheet
- SSC8013GS6-AFSEMI.pdf
- Description
- P-Channel Enhancement Mode MOSFET
Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.Excellent thermal and electrical capabilities. Package Information D: Drain; G: Gate; S: Source ③ ①② SOT23 Unit:mm
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