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SSC8030GS1 N-Channel Enhancement Mode MOSFET

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Description

SSC8030GS1 N-Channel Enhancement Mode MOSFET * .
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number
SSC8030GS1
Manufacturer
AFSEMI
File Size
184.25 KB
Datasheet
SSC8030GS1-AFSEMI.pdf
Description
N-Channel Enhancement Mode MOSFET

Features

* VDS 30V VGS ±20V RDSon TYP 8.5mR@10V 10.5mR@4V5 ID 12A

Applications

* Applications
* Load Switch
* PC/NB
* DCDC conversion Pin configuration Top View
* Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www. afsemi. com h // S i P 1/4 Analog Future SSC8030GS1
* Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Para

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