SSC8205GSB Datasheet - AFSEMI

SSC8205GSB, Dual N-Channel Enhancement Mode MOSFET

SSC8205GSB Common Drain N-Channel Enhancement Mode MOSFET * .
Case: SOT23-6 Case Material: Molded Plastic.

Features

* VDS VGS RDSon TYP ID 20mR@4V5 20V ±12V 22mR@3V85 6A 24mR@2V5 Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current

Applications

* Li-ion battery protection ;
* Load swich
* Pin configuration Top View PIN NUMBER 1 2 3 4 5 6 SOT23-6L NAME S1 D S2 G2 D G1 FUNCTION SOURCE1 DRAIN SOURCE2 GATE2 DRAIN GATE1
* Package Information ⑥ ⑤④ ①② ③ SSC-1V0 Units:mm SOT23-6L http://www. afsemi. com 1/5 Analog Future

SSC8205GSB-AFSEMI.pdf