SSC8205GSB Datasheet, Mosfet, AFSEMI

SSC8205GSB Features

• Mosfet VDS VGS RDSon TYP ID 20mR@4V5 20V ±12V 22mR@3V85 6A 24mR@2V5 Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current han

PDF File Details

Part number:

SSC8205GSB

Manufacturer:

AFSEMI

File Size:

308.14kb

Download:

📄 Datasheet

Description:

Dual n-channel enhancement mode mosfet. Case: SOT23-6 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C

SSC8205GSB Application

• Applications
• Li-ion battery protection ;
• Load swich
• Pin configuration Top View PIN NUMBER 1 2 3 4 5 6 SOT23-6L NAME

TAGS

SSC8205GSB

AFSEMI

📁 Related Datasheet

SSC8205GTA - Common Drain N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8205GTA Common Drain N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID 18mR@4V5 20V ±12V 20mR@3V85 6A 22mR@2V5 Advanced t.

SSC8220GT8 - N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8220GT8 N-Channel Enhancement Mode MOSFET  Features VDS VGS 20V ±12V RDSon TYP 3.5mR@10V 4.5mR@4V5 6.0mR@3V3 ID 70A  General Description Th.

SSC8222GN2 - N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8222GN2 N-Channel Enhancement Mode MOSFET  Features VDS VGS 20V ±12V RDSon TYP 5.6mR@4V5 7.5mR@2V5 13mR@2V5 ID 10A  Applications  Li-ion ba.

SSC8228GQ4 - N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8228GQ4 N-Channel Enhancement Mode MOSFET  Features  VDS 20V VGS ±12V RDSon TYP 5.5mR@4V5 7mR@2V5 ID 40A   General Description The SSC.

SSC8013GS6 - P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8013GS6 P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 38mR@-4V5 ID  Applications  Load Switch  Portable Devices  DCDC co.

SSC8013GSB - P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8013GSB P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 38mR@-4V5 ID  Applications  Load Switch  Portable Devices  DCDC co.

SSC8015GS6 - P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8015GS6 P-Channel Enhancement Mode MOSFET  Features  VDS VGS -16V ±12V RDSon TYP 25mR@-4V5 33mR@-2V5 ID -4.5A   General Description T.

SSC8019GN2 - P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8019GN2 P-Channel Enhancement Mode MOSFET  Features VDS -18V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5 ID -6.5A  Applicat.

SSC8020GS6 - N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8020GS6 N-Channel Enhancement Mode MOSFET  Features  VDS 20V VGS ±8V RDSon TYP 140mR@4V5 180mR@2V5 270mR@1V8 ID 750mA   General Descri.

SSC8020GS8 - N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8020GS8 N-Channel Enhancement Mode MOSFET  Features  VDS 20V VGS ±8V RDSon TYP 140mR@4V5 180mR@2V5 270mR@1V8 ID 0.6A   General Descrip.