SSC8220GT8 Datasheet - AFSEMI

SSC8220GT8, N-Channel Enhancement Mode MOSFET

SSC8220GT8 N-Channel Enhancement Mode MOSFET * .
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

Features

* VDS VGS 20V ±12V RDSon TYP 3.5mR@10V 4.5mR@4V5 6.0mR@3V3 ID 70A

Applications

* Applications
* Desktop Computer
* Notebook
* Pin Configuration Top View
* Package Information TO-252 SSC-V1.0 Units:mm http://www. afsemi. com 1/5 Analog Future SSC8220GT8
* Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Symbol Drain-Source

SSC8220GT8-AFSEMI.pdf