AGM085N10C1 Datasheet, Mosfet, AGMSEMI

AGM085N10C1 Features

• Mosfet BVDSS RDSON ID 100V 9.0mΩ 80A
• Advance high cell density Trench technology
• Low RDS(ON) to minimize conductive loss
• Low Gate Charge for fast switching

PDF File Details

Part number:

AGM085N10C1

Manufacturer:

AGMSEMI

File Size:

956.01kb

Download:

📄 Datasheet

Description:

Mosfet. The AGM085N10C1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product

AGM085N10C1 Application

• Applications
• Features BVDSS RDSON ID 100V 9.0mΩ 80A
• Advance high cell density Trench technology
• Low RDS(ON) to

TAGS

AGM085N10C1

AGMSEMI

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