AGM085N10C1 Datasheet - AGMSEMI

AGM085N10C1 MOSFET

AGM085N10C1 Features

* BVDSS RDSON ID 100V 9.0mΩ 80A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching TO-220C Pin Configuration

* Low Thermal resistance

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous Rec

Datasheet Details

AGM085N10C1

AGMSEMI

956.01 KB

Mosfet.

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