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AGM085N10D MOSFET

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Description

AGM085N10D * General .
The AGM085N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

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Datasheet Specifications

Part number
AGM085N10D
Manufacturer
AGMSEMI
File Size
774.25 KB
Datasheet
AGM085N10D-AGMSEMI.pdf
Description
MOSFET

Features

* BVDSS RDSON ID 100V 8.0mΩ 80A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Low Thermal resistance TO-252 Pin Configuration D

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