AGM085N10D Datasheet - AGMSEMI

AGM085N10D MOSFET

AGM085N10D Features

* BVDSS RDSON ID 100V 8.0mΩ 80A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching

* Low Thermal resistance TO-252 Pin Configuration D

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous Rec

Datasheet Details

AGM085N10D

AGMSEMI

774.25 KB

Mosfet.

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