AGM303AP Datasheet - AGMSEMI

AGM303AP MOSFET

AGM303AP Features

* Advance high cell density Trench technology PDFN3.3

* 3.3 Pin Configuration

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching

* Low Thermal resistance

* 100% Avalanche tested

* 100% DVDS tested

* Application

* MB/VGA Vcore

* S

Datasheet Details

AGM303AP

AGMSEMI

0.97 MB

Mosfet.

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