Part number:
AGM3015D
Manufacturer:
AGMSEMI
File Size:
960.44 KB
Description:
Mosfet.
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Low Thermal resistance
* 100% Avalanche tested
* 100% DVDS tested
* Application
* MB/VGA Vcore
* SMPS 2nd Synchronous Rectifier
* POL
AGM3015D Datasheet (960.44 KB)
AGM3015D
AGMSEMI
960.44 KB
Mosfet.
📁 Related Datasheet
AGM3015A - MOSFET
(AGMSEMI)
AGM3015A
● General Description
The AGM3015A bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
AGM3015H - MOSFET
(AGMSEMI)
AGM3015H
● General Description
The AGM3015H bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
AGM301A1 - MOSFET
(AGMSEMI)
● General Description
The AGM301A1 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This de.
AGM302A1 - MOSFET
(AGMSEMI)
AGM302A1
● General Description
The AGM302A1 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
AGM302D1 - MOSFET
(AGMSEMI)
AGM302D1
● General Description
The AGM302D1 bines advanced trenchMOSFET technology with a low resistance package to provide extremely low RDS(ON) .
AGM303AP - MOSFET
(AGMSEMI)
AGM303AP
● General Description
The AGM303AP bines advanced trench
Product Summary
MOSFET technology with a low resistance package
to provide ex.
AGM303D - MOSFET
(AGMSEMI)
AGM303D
● General Description
The AGM303D bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) ..
AGM303D1 - MOSFET
(AGMSEMI)
AGM303D1
● General Description
The AGM303D1 bines advanced trenchMOSFET technology with a low resistance package to provide extremely low RDS(ON) .